SYNTHESIS OF BETA-SIC THIN-FILMS FOR HIGH-TEMPERATURE SENSORS BY THE ACTIVATED REACTIVE EVAPORATION PROCESS

被引:5
作者
CHA, YHC
JOU, S
PRAKASH, S
DOERR, HJ
BUNSHAH, RF
机构
[1] Department of Materials Science and Engineering, School of Engineering and Applied Science, University of California, Los Angeles
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1993年 / 163卷 / 02期
基金
美国国家航空航天局;
关键词
D O I
10.1016/0921-5093(93)90791-C
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Beta-SiC thin films were grown on Si(100) and alpha-alumina substrates by the activated reactive evaporation (ARE) process. The optimum deposition conditions are an acetylene gas pressure P(C2H2) of 3 mTorr, substrate temperature T(s) of 690-degrees-C, and electron beam emission current I(e) of 150 mA. Si was evaporated from an electron beam evaporation source in a d.c. glow discharge of acetylene gas. The effects of substrate temperature and C2H2 pressure, which are the most important deposition parameters, on the structure and stoichiometry of the films were investigated by various thin film characterization techniques, such as X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) for the identification of crystalline phases, energy-dispersive X-ray spectroscopy (EDXS) and Auger electron spectroscopy (AES) for composition analysis, and scanning electron microscopy (SEM) for microstructure.
引用
收藏
页码:207 / 210
页数:4
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