ELECTRON EMISSION FROM A COLD-CATHODE GAAS P-N JUNCTION

被引：25

作者：

WILLIAMS, BF

SIMON, RE

机构：

[1] RCA Electronic Components, David Sarnoff Research Center, Princeton

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期

关键词：

D O I：

10.1063/1.1652783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron emission into vacuum has been observed from a forward-biased Cs- and O-treated GaAs p-n junction. The device was operated at room temperature with dc bias voltage. The effective efficiency of the device (emission current divided by internal diode current eligible for emission) was 0.05%, while the over-all efficiency of the device (emission current divided by total diode current) was 10-6. The low over-all efficiency is explained in terms of sample geometry and surface activation. © 1969 The American Institute of Physics.

引用

页码：214 / &

共 7 条

[1] A PROPOSED P-N JUNCTION CATHODE
GEPPERT, DV
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 61 - &
[2] JAMES LW, 1968, DA44009AMC1475T CONT, P33
[3] EFFECTIVE IONIZATION RATE FOR HOT CARRIERS IN GAAS
KRESSEL, H
KUPSKY, G
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) : 535 - &
[4] NAKANO T, 1967, JAPAN J APPL PHYS, V6, P6
[5] NELSON H, 1963, RCA REV, V24, P603
[6] SIMON RE, 1963, DA36039AMC02221E CON
[7] TURNBULL AA, 1968, BRIT J APPL PHYS, V1, P155

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