THE EFFECT OF HYDROGEN CONTENT ON THE OPTOELECTRONIC PROPERTIES OF AMORPHOUS SILICON-CARBIDE FILMS

被引：23

作者：

GIRGINOUDI, D

THANAILAKIS, A

机构：

[1] Laboratory of Electrical and Electronic Materials Technology, Department of Electrical Engineering, Democritus University of Thrace, 67100, Xanthi

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 03期

关键词：

D O I：

10.1063/1.347237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optoelectronic properties of rf sputtered hydrogenated amorphous silicon-carbide thin films were investigated by optical and infrared absorption, photoconductivity, photoluminescence (PL), and electron spin resonance studies as a function of the hydrogen content. The results show that the hydrogen content has a very significant effect on the optical band gap and the photoconductivity of these films. The increased intensity of the PL spectra with an increase in the hydrogen content is very well correlated with the corresponding decrease in the spin density.

引用

页码：1490 / 1493

页数：4

共 19 条

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