BEHAVIOR OF INDIUM ON THE SI(111)7X7 SURFACE AT LOW-METAL COVERAGE

被引：80

作者：

NOGAMI, J

PARK, SI

QUATE, CF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1479 / 1482

页数：4

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