RESONANT TUNNELING FIELD-EFFECT TRANSISTORS

[11] FUTATSUGI T, 1986, P INT ELECTRON DEVIC, P286

[12] HIYAMIZU S, 1987, 3RD INT C SUP MICR M

[13] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123

[14] INATA T, 1987, JAPANESE J APPLIED P, V26

[15] SHORT-CHANNEL EFFECTS IN 0.5-MU-M SOURCE-DRAIN SPACED VERTICAL GAAS-FETS - A 1ST EXPERIMENTAL INVESTIGATION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 125 - 127

[16] ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE IN STRAINED-LAYER GAAS-ALGAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1528 - 1530

[17] HETEROJUNCTION DOUBLE-BARRIER DIODES FOR LOGIC APPLICATIONS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1246 - 1248

[18] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : R31 - R55

[19] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 490 - 492

[20] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +

[11] FUTATSUGI T, 1986, P INT ELECTRON DEVIC, P286

[12] HIYAMIZU S, 1987, 3RD INT C SUP MICR M

[13] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123

[14] INATA T, 1987, JAPANESE J APPLIED P, V26

[15] SHORT-CHANNEL EFFECTS IN 0.5-MU-M SOURCE-DRAIN SPACED VERTICAL GAAS-FETS - A 1ST EXPERIMENTAL INVESTIGATION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 125 - 127

[16] ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE IN STRAINED-LAYER GAAS-ALGAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1528 - 1530

[17] HETEROJUNCTION DOUBLE-BARRIER DIODES FOR LOGIC APPLICATIONS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1246 - 1248

[18] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : R31 - R55

[19] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 490 - 492

[20] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +