A RECESSED-GAP CAPACITIVE-GATE GAAS CCD

[1] FABRICATION OF EPITAXIAL GAAS/ALGAAS DIAPHRAGMS BY SELECTIVE DRY ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05): : 1592 - 1594

[2] Burke B. E., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V613, P124

[3] Colbeth R. E., 1989, Proceedings of the SPIE - The International Society for Optical Engineering, V1071, P108, DOI 10.1117/12.952512

[4] DEYHIMY I, 1981, ELECTRON DEVIC LETT, V2, P70

[5] A 2-PHASE CCD ON GAAS WITH 0.3-MU-M-WIDE ELECTRODE GAPS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1195 - 1197

[6] KOSEL PB, 1987, IEDM, P136

[7] A GALLIUM-ARSENIDE OVERLAPPING-GATE CHARGE-COUPLED DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 237 - 240

[8] CHARACTERIZATION OF EVAPORATED CR-SIO CERMET FILMS FOR RESISTIVE-GATE CCD APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1575 - 1579

[9] SOVERO EA, 1984, P IEEE GAAS I C S, P101

[10] SOVERO EA, 1983, P IEEE GAAS IC S, P92

[1] FABRICATION OF EPITAXIAL GAAS/ALGAAS DIAPHRAGMS BY SELECTIVE DRY ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05): : 1592 - 1594

[2] Burke B. E., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V613, P124

[3] Colbeth R. E., 1989, Proceedings of the SPIE - The International Society for Optical Engineering, V1071, P108, DOI 10.1117/12.952512

[4] DEYHIMY I, 1981, ELECTRON DEVIC LETT, V2, P70

[5] A 2-PHASE CCD ON GAAS WITH 0.3-MU-M-WIDE ELECTRODE GAPS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1195 - 1197

[6] KOSEL PB, 1987, IEDM, P136

[7] A GALLIUM-ARSENIDE OVERLAPPING-GATE CHARGE-COUPLED DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 237 - 240

[8] CHARACTERIZATION OF EVAPORATED CR-SIO CERMET FILMS FOR RESISTIVE-GATE CCD APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1575 - 1579

[9] SOVERO EA, 1984, P IEEE GAAS I C S, P101

[10] SOVERO EA, 1983, P IEEE GAAS IC S, P92