FABRICATION OF EPITAXIAL GAAS/ALGAAS DIAPHRAGMS BY SELECTIVE DRY ETCHING

被引：2

作者：

ADE, RW ^{[1
]}

FOSSUM, ER ^{[1
]}

TISCHLER, MA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1592 / 1594

页数：3

共 16 条

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