PROPERTIES OF POLYCRYSTALLINE ALAS-GAAS ON GRAPHITE HETEROJUNCTIONS FOR SOLAR-CELL APPLICATIONS

[1] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[2] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203

[3] SPUTTERED FILMS FOR DISPLAY DEVICES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1013 - 1018

[4] HAACKE G, 1976, APPL PHYS LETT, V28, P622, DOI 10.1063/1.88589

[5] James L. W., 1975, 11th IEEE Photovoltaic Specialists Conference, P402

[6] VAPOR-PHASE-EPITAXIAL GROWTH OF N-ALAS-P-GAAS SOLAR-CELLS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 117 - 127

[7] ELECTRICAL CHARACTERIZATION OF VAPOR-PHASE EPITAXIALLY GROWN LARGE-AREA N-AIAS-P-GAAS HETEROJUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 135 - 140

[8] ANODIC PASSIVATION AND COATING OF AIAS IN AQUEOUS-SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 442 - 443

[9] VPE GROWTH OF N-ALAS ON GAAS FOR HETEROJUNCTION DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1524 - 1531

[10] JOHNSTON WD, 1977, 12TH P IEEE PHOT SPE, P934

[1] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[2] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203

[3] SPUTTERED FILMS FOR DISPLAY DEVICES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1013 - 1018

[4] HAACKE G, 1976, APPL PHYS LETT, V28, P622, DOI 10.1063/1.88589

[5] James L. W., 1975, 11th IEEE Photovoltaic Specialists Conference, P402

[6] VAPOR-PHASE-EPITAXIAL GROWTH OF N-ALAS-P-GAAS SOLAR-CELLS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 117 - 127

[7] ELECTRICAL CHARACTERIZATION OF VAPOR-PHASE EPITAXIALLY GROWN LARGE-AREA N-AIAS-P-GAAS HETEROJUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 135 - 140

[8] ANODIC PASSIVATION AND COATING OF AIAS IN AQUEOUS-SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 442 - 443

[9] VPE GROWTH OF N-ALAS ON GAAS FOR HETEROJUNCTION DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1524 - 1531

[10] JOHNSTON WD, 1977, 12TH P IEEE PHOT SPE, P934