ELECTRICAL CHARACTERIZATION OF VAPOR-PHASE EPITAXIALLY GROWN LARGE-AREA N-AIAS-P-GAAS HETEROJUNCTIONS

被引：6

作者：

JOHNSTON, WD ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：135 / 140

页数：6

共 16 条

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[2] EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS [J].

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[3]

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[4]

DOETZER R, 1973, CHEM ING TECHNIK, V45, P653

[5] GA1-XALXAS-GAAS P-P-N HETEROJUNCTION SOLAR CELLS [J].

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WOODALL, JM .

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[6] HIGH-PERFORMANCE SOLAR CELL MATERIAL - NORMAL-ALAS-PARA-GAAS PREPARED BY VAPOR-PHASE EPITAXY [J].

JOHNSTON, WD ;

CALLAHAN, WM .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :150-152

[7] MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE [J].

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :494-496

[8] ANODIC PASSIVATION AND COATING OF AIAS IN AQUEOUS-SOLUTIONS [J].

JOHNSTON, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :442-443

[9] VPE GROWTH OF N-ALAS ON GAAS FOR HETEROJUNCTION DEVICES [J].

JOHNSTON, WD ;

CALLAHAN, WM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1524-1531

[10]

Milnes AG, 1972, HETEROJUNCTIONS META

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