ION-ASSISTED SPUTTER DEPOSITION OF CDTE LAYERS

被引：9

作者：

DAS, SR

RAJAN, K

VANDERMEER, P

COOK, JG

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1987年 / 65卷 / 08期

关键词：

D O I：

10.1139/p87-133

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：864 / 867

页数：4

共 8 条

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GREENE, JE .

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[2] EPITAXIAL-GROWTH OF (100) CDTE ON (100) GAAS INDUCED BY PULSED LASER EVAPORATION [J].

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HSU, C ;

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CHU, X .

SURFACE SCIENCE, 1986, 168 (1-3) :473-482

[4] EPITAXIAL CRYSTAL-GROWTH BY SPUTTER DEPOSITION - APPLICATIONS TO SEMICONDUCTORS .1. [J].

GREENE, JE .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1983, 11 (01) :47-97

[5] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS [J].

HOKE, WE ;

TRACZEWSKI, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5087-5089

[6] EPITAXIAL-GROWTH AND STRUCTURE OF FILMS OF CDTE EVAPORATED IN VACUUM ON TO SILICON [J].

HOLT, DB ;

ABDALLA, MI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :507-512

[7] THE STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF INSB FILMS PREPARED BY METALORGANIC MAGNETRON SPUTTERING [J].

WEBB, JB ;

HALPIN, C ;

NOAD, JP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2949-2953

[8]

ZANIO K, 1978, SEMICONDUCT SEMIMETA, V13

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