SHEET RESISTANCE VARIATION ON COLOR-BANDED SILICON FOLLOWING HIGH DOSE IMPLANTATIONS AT HIGH DOSE-RATES

被引:6
作者
BEANLAND, DG [1 ]
CHIVERS, DJ [1 ]
机构
[1] AERE,DIV CHEM,HARWELL OX11 0RA,OXFORDSHIRE,ENGLAND
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期
关键词
D O I
10.1116/1.569783
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1536 / 1540
页数:5
相关论文
共 26 条
[11]  
FREEMAN JH, 1970, R6496 AERE REP
[12]  
FREEMAN JH, 1969, P INT MASS SPEC C KY
[13]  
FREEMAN JH, 1974, R7796 AERE REP
[14]  
FREEMAN JH, 1969, R6254 AERE REP
[15]  
FREEMAN JH, 1975, ION IMPLANTATION SEM, P555
[16]  
FREEMAN JH, 1970, P C ION IMPLANTATION
[17]  
GERASIMENKO NN, 1974, SOV PHYS SEMICOND+, V7, P1461
[18]   ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN 1-EV TO 6-EV REGION [J].
KURTIN, S ;
SHIFRIN, GA ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1969, 14 (07) :223-&
[19]   DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT [J].
MANNING, I ;
MUELLER, GP .
COMPUTER PHYSICS COMMUNICATIONS, 1974, 7 (02) :85-94
[20]  
MATTHEWS MD, 1974, R7805 AERE REP