RAPID THERMAL ALLOYED OHMIC CONTACT ON INP

被引：25

作者：

BAHIR, G ^{[1
]}

MERZ, JL ^{[1
]}

ABELSON, JR ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期

关键词：

GOLD AND ALLOYS - Applications - GOLD GERMANIUM ALLOYS - Applications - HEAT TREATMENT - Annealing - NICKEL AND ALLOYS - Applications - SEMICONDUCTING INDIUM COMPOUNDS - Applications;

D O I：

10.1007/BF02653363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of a study of the electrical and metallurgical properties of thin metallic layers deposited on InP for use as an ohmic contact are presented. A rapid thermal annealing system was used to alloy AuGe/Ni/Au contacts to n-type ion implanted InP. Rutherford backscattering and contact resistivity measurement were used to evaluate the structural and electrical characteristics of these rapid thermal alloyed thin films. Varying degrees of mixing between the metals and the semiconductor were found depending on the temperature and temperature-time cycle. These results were compared to furnace and graphite strip-heater alloying techniques. A correlation between the interface structure and the contact resistance was found. Temperatures between 430 and 450 degree C and alloying time of 2 sec have produced the best electrical results.

引用

页码：257 / 262

页数：6

共 16 条

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