STRETCHED-EXPONENTIAL LAW FOR CARRIER CAPTURE KINETICS OF A TRAPPING CENTER IN COMPENSATED AMORPHOUS-SILICON

被引：6

作者：

CHEN, YF

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.40.3437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3437 / 3438

页数：2

共 13 条

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