NITROGEN STATES IN GA(AS,P) AND THE INTERMEDIATE-RANGE MODEL

被引:13
作者
KLEIMAN, GG
机构
[1] Instituto de Física, Universidade Estadual de Campinas, 13100 Campinas, São Paulo
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 06期
关键词
D O I
10.1103/PhysRevB.19.3198
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The appearance of new single nitrogen lines in recent Ga(As,P): N photoluminescence data has been interpreted theoretically in terms of an impurity potential that has a short-range part and a more extended portion arising from strain effects. Two current theories have interpreted the range of the latter as either long or intermediate: the implications for impurity-induced lattice relaxation are quite different in the two cases. To resolve this issue, we examine the consistency of the data with a nearest-neighbor shell model as well as with more extended intermediate-range models. By introducing a soluble Green's-function model, we show that the former is inconsistent; from basic quantum-mechanical considerations, we show that monotonic, attractive potentials are not consistent unless their ranges are greater than ∼ 20-25. © 1979 The American Physical Society.
引用
收藏
页码:3198 / 3214
页数:17
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