VALENCE-BAND DEFORMATION POTENTIALS FOR III-V COMPOUNDS

[1] ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1970, 37 (01): : 433 - &

[2] Bir G. L., 1962, FIZ TVERD TELA, V4, P1180

[3] BIR GI, 1962, SOV PHYS-SOL STATE, V4, P867

[4] BIR GL, 1960, FIZ TVERD TELA, V2, P2287

[5] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[6] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P150

[7] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P133

[8] TEMPERATURE-DEPENDENCE OF COMBINED EFFECTIVE MASS OF HOLES IN SILICON [J]. LETTERE AL NUOVO CIMENTO, 1970, 3 (08): : 239 - &

[9] HILSUM C, 1961, SEMICONDUCTING 3 5 C, P118

[10] LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J]. PHYSICAL REVIEW, 1968, 174 (03): : 867 - &

[1] ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1970, 37 (01): : 433 - &

[2] Bir G. L., 1962, FIZ TVERD TELA, V4, P1180

[3] BIR GI, 1962, SOV PHYS-SOL STATE, V4, P867

[4] BIR GL, 1960, FIZ TVERD TELA, V2, P2287

[5] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[6] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P150

[7] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P133

[8] TEMPERATURE-DEPENDENCE OF COMBINED EFFECTIVE MASS OF HOLES IN SILICON [J]. LETTERE AL NUOVO CIMENTO, 1970, 3 (08): : 239 - &

[9] HILSUM C, 1961, SEMICONDUCTING 3 5 C, P118

[10] LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J]. PHYSICAL REVIEW, 1968, 174 (03): : 867 - &