AU-GAAS(110) INTERFACE - PHOTOEMISSION-STUDIES OF THE EFFECTS OF TEMPERATURE

被引：40

作者：

PETRO, WG ^{[1
]}

KENDELEWICZ, T ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.34.7089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7089 / 7106

页数：18

共 86 条

[81] FERMI-LEVEL PINNING BY MISFIT DISLOCATIONS AT GAAS INTERFACES [J].

WOODALL, JM ;

PETTIT, GD ;

JACKSON, TN ;

LANZA, C ;

KAVANAGH, KL ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1983, 51 (19) :1783-1786

[82] TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS [J].

YOKOYAMA, N ;

OHNISHI, T ;

ODANI, K ;

ONODERA, H ;

ABE, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1541-1547

[83]

YU KY, 1976, THESIS STANFORD U

[84] INTERFACIAL PROPERTIES GOVERNING OHMIC CONTACTS BETWEEN GOLD ALLOYS AND ORIENTED GALLIUM-ARSENIDE CRYSTALS [J].

ZEE, LY ;

MUNIR, ZA .

JOURNAL OF MATERIALS SCIENCE, 1975, 10 (11) :1929-1937

[85] CORRELATION OF THE CRYSTAL STRUCTURAL AND MICROSTRUCTURAL EFFECT OF THE INTERFACIAL PROCESSES BETWEEN GOLD AND GAAS [J].

ZENG, XF ;

CHUNG, DDL .

THIN SOLID FILMS, 1982, 93 (1-2) :207-218

[86] FERMI-LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE [J].

ZUR, A ;

MCGILL, TC ;

SMITH, DL .

PHYSICAL REVIEW B, 1983, 28 (04) :2060-2067

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