PHOTO-ASSISTED ETCHING OF P-TYPE SEMICONDUCTORS

被引:12
作者
VANDEVEN, J
NABBEN, HJP
机构
[1] Philips Research Laboratories
关键词
D O I
10.1149/1.2085422
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A novel technique is described with which the etching of p-type semiconductors in solution can be affected by the use of light. The method is based on the principle that illumination of a part of the surface leads to enhanced dissolution in the non-illuminated areas. Effective separation of photogenerated charge carriers is obtained by employing a two-compartment cell. In this cell, the dark and illuminated surfaces can be exposed to solutions of a different composition and pH. The choice of the oxidizing agent in this system is important: its reduction should not involve free carriers in the semiconductor bands in the dark, whereas it should do so under illumination. For GaAs, H2O2 in H2SO4, and for InP, Br2 in HBr, are shown to be suitable. Ratios of etch rates under illumination and in the dark of the order of 10(3) and higher are demonstrated.
引用
收藏
页码:3401 / 3406
页数:6
相关论文
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