GAAS/GE HETEROJUNCTION GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION AND ITS APPLICATION TO HIGH-EFFICIENCY PHOTOVOLTAIC DEVICES

被引：25

作者：

CHEN, JC ^{[1
]}

RISTOW, ML ^{[1
]}

CUBBAGE, JI ^{[1
]}

WERTHEN, JG ^{[1
]}

机构：

[1] VS CORP,PALO ALTO,CA 94303

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 03期

关键词：

SOLAR CELLS; GAAS; GERMANIUM SUBSTRATES; PHOTOVOLTAIC DEVICE;

D O I：

10.1007/BF02660465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the heteroepitaxial growth of GaAs on Ge substrates by metal-organic chemical vapor deposition (MOCVD). Different growth conditions and substrate orientations were employed to examine the properties of GaAs grown upon Ge substrates, and in particular the GaAs/Ge interface. The interface properties were found to strongly depend on growth conditions. By small changes in the growth temperature, the GaAs/Ge interface was altered from active to passive. Only a narrow temperature window (600 to 630-degrees-C) for the initial GaAs layer growth gave the passive-Ge junction together with good surface morphology. Accordingly, a high efficiency (19%, AMO) GaAs solar cell was grown by atmospheric pressure MOCVD on a Ge substrate without any junction in the Ge.

引用

页码：347 / 353

页数：7

共 9 条

[1]

HART RE, 1988, 20TH C REC IEEE PHOT, P764

[2] HIGH-EFFICIENCY (GREATER-THAN 20-PERCENT-AMO) GAAS SOLAR-CELLS GROWN ON INACTIVE-GE SUBSTRATES [J].