SI AS A DIFFUSION BARRIER FOR GE/GAAS HETEROJUNCTIONS

被引：20

作者：

STRITE, S ^{[1
]}

UNLU, MS ^{[1
]}

ADOMI, K ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the electrical characteristics, before and after annealing, of p-Ge/N-GaAs heterojunction diodes to similar diodes which incorporate a nominally 10 Å layer of pseudomorphic Si at the Ge/GaAs interface. Both types of diodes exhibit excellent current-voltage characteristics before annealing. Diodes having no Si interlayer show significant degradation after a 20 min anneal at 640 °C. Diodes incorporating the Si interlayer retain excellent diode characteristics after a 20 min anneal at temperatures as high as 720 °C.

引用

收藏

页码：1673 / 1675

页数：3

相关论文

共 10 条

[1] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].

BAUER, RS ;

MIKKELSEN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :491-497

[2] PNP GAAS/GE/GE PHOTOTRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY - IMPLICATIONS FOR BIPOLAR AND HOT-ELECTRON TRANSISTORS [J].

CHAND, N ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :484-486

[3] BREAKDOWN BEHAVIOR OF GAAS/ALGAAS HBTS [J].

CHEN, JJ ;

GAO, GB ;

CHYI, JI ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2165-2172

[4] REALIZATION OF A GAAS-GE WIDE BAND GAP EMITTERTRANSISTOR [J].

JADUS, DK ;

FEUCHT, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :102-&

[5]

KIMURA T, 1989, 47TH IEEE DEV RES C

[6]

MONCH W, 1980, J VAC SCI TECHNOL, V17, P1094, DOI 10.1116/1.570597

[7] SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS [J].

NEAVE, JH ;

LARSEN, PK ;

JOYCE, BA ;

GOWERS, JP ;

VANDERVEEN, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :668-674

[8] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

STALL, RA ;

WOOD, CEC ;

BOARD, K ;

DANDEKAR, N ;

EASTMAN, LF ;

DEVLIN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4062-4069

[9] CHARACTERISTICS OF P-GE/N-GAAS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].

UNLU, MS ;

STRITE, S ;

WON, T ;

ADOMI, K ;

CHEN, J ;

MOHAMMAD, SN ;

BISWAS, D ;

MORKOC, H .

ELECTRONICS LETTERS, 1989, 25 (20) :1359-1360

[10] ELECTRICAL CHARACTERISTICS OF P+-GE/(N-GAAS AND N-ALGAAS) JUNCTIONS AND THEIR APPLICATIONS TO GE BASE TRANSISTORS [J].

UNLU, MS ;

STRITE, S ;

GAO, GB ;

ADOMI, K ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :842-844