ELECTRICAL CHARACTERISTICS OF P+-GE/(N-GAAS AND N-ALGAAS) JUNCTIONS AND THEIR APPLICATIONS TO GE BASE TRANSISTORS

被引：19

作者：

UNLU, MS ^{[1
]}

STRITE, S ^{[1
]}

GAO, GB ^{[1
]}

ADOMI, K ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 09期

关键词：

D O I：

10.1063/1.102679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties of p+-Ge/N-AlGaAs (and N-GaAs) are studied as a function of temperature and current conduction mechanisms are outlined. Junctions with Ge grown on GaAs and AlGaAs show ideality factors of unity and 1.03 at room temperature, respectively. Temperature-dependent current-voltage (I-V) and room-temperature capacitance-voltage (C-V) characterization are employed to determine the built-in voltage (Vbi) of the two diode structures. For Ge/GaAs, a valence-band discontinuity of 0.49±0.05 eV is measured which is in good agreement with the value deduced from photoemission studies. Implications of p+-Ge base in AlGaAs/Ge/GaAs double-heterojunction bipolar transistors (DHBTs) are discussed.

引用

页码：842 / 844

页数：3

共 16 条

[1] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].