STRAIN SENSITIVITY IN FILM AND CERMET RESISTORS - MEASURED AND PHYSICAL QUANTITIES

被引：21

作者：

MORTEN, B ^{[1
]}

PIROZZI, L ^{[1
]}

PRUDENZIATI, M ^{[1
]}

TARONI, A ^{[1
]}

机构：

[1] FABBRICA ITALIANA MAGNETI MARELLI,PAVIA,ITALY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 05期

关键词：

D O I：

10.1088/0022-3727/12/5/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain coefficient of resistivity of resistors deposited on a substrate is analysed, and an expression for its correlation to the measurable longitudinal and transverse gauge factors is given for isotropic (metal, amorphous semiconductor and cermet) resistors. The use of this expression for the evaluation of other physical quantities is exemplified by the calculation of the temperature coefficients of resistivity for resistors on substrates of different thermal expansivity.

引用

页码：L51 / L54

页数：4

共 10 条

[1]

DEAN M, 1962, SEMICONDUCTORS CONVE, P109

[2]

GILES AF, 1966, ELECTRONIC SENSING D

[3] EFFECT OF EXPANSION MISMATCH ON TEMPERATURE COEFFICIENT OF RESISTANCE OF THIN FILMS [J].