THE EFFECTS OF APPLIED AND INTERNAL STRAIN ON THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SILICON

被引：40

作者：

SPEAR, WE

HEINTZE, M

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 05期

关键词：

D O I：

10.1080/13642818608236853

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：343 / 358

页数：16

共 23 条

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