STRAIN COMPENSATION IN SILICON BY DIFFUSED IMPURITIES

被引：35

作者：

YEH, TH

JOSHI, ML

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 01期

关键词：

D O I：

10.1149/1.2411778

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：73 / &

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