OHMIC CONTACTS TO LIGHTLY DOPED NORMAL-INDIUM AND PARA-INDIUM PHOSPHIDE SURFACES

被引：12

作者：

TSENG, W

CHRISTOU, A

DAY, H

DAVEY, J

WILKINS, B

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：623 / 625

页数：3

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