ALUMINUM GETTERING OF COBALT IN SILICON

被引：30

作者：

APEL, M

HANKE, I

SCHINDLER, R

SCHROTER, W

机构：

[1] IV. Physikalisches Institut der Universität Göttingen, D-37073 Göttingen

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.357339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the gettering effect of an evaporated aluminum layer on single crystalline and cast multicrystalline silicon doped with radioactive cobalt-57 by means of radiotracer methods and Mossbauer spectroscopy. We present evidence that aluminum gettering works at high temperatures and transfers the cobalt atoms from the Si bulk to the liquid Al-Si phase. Presumably Al gettering can be explained as a segregation induced process caused by a higher solubility of the metallic impurity in the liquid Al-Si phase compared with that in solid silicon.

引用

收藏

页码：4432 / 4433

页数：2

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