PERFORMANCE OF 600-V N-CHANNEL IGBTS AT LOW-TEMPERATURES

被引：4

作者：

CHOW, TP ^{[1
]}

SO, KC ^{[1
]}

LAU, D ^{[1
]}

机构：

[1] RENSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 09期

关键词：

D O I：

10.1109/55.116930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The static and dynamic performance of 600-V, n-channel, vertical insulated-gate bipolar transistors (IGBT's) at temperatures as low as 77 K has been measured and analyzed. The IGBT's demonstrate a better performance in turn-off times and maximum gate controllable current, at the expense of a slightly higher forward drop.

引用

页码：498 / 499

页数：2

共 11 条

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