CMOS-SOS EAROM MEMORY ARRAYS

被引：2

作者：

STEWART, RG

机构：

[1] RCA Solid State Technology Center

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 05期

关键词：

D O I：

10.1109/JSSC.1979.1051285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new low-voltage nonvolatile memory cell has been fabricated using standard CMOS/SOS processing. The cell can be programmed at 10 V, conducts 400 µA when ‘programmed, and can be erased either electrically or with UV light. Using this cell, a family of memories have been built which dissipate only 50 µ W at 5 V, retain data for 17.3 years at 125°C, and have a WRITE/ERASE endurance in excess of 300 cycles. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：860 / 864

页数：5

共 10 条

[1]

ABBAS SA, 1976, 13TH ANN P REL PHYS, V13, P1

[2] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J].