ULTRAHIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF EXCITONS BOUND TO BORON IN SILICON UNDER UNIAXIAL-STRESS

被引：16

作者：

KARASYUK, VA ^{[1
]}

STEELE, AG ^{[1
]}

MAINWOOD, A ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

DAVIES, G ^{[1
]}

BRAKE, DM ^{[1
]}

THEWALT, MLW ^{[1
]}

机构：

[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.45.11736

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of uniaxial stress on the no-phonon photoluminescence spectrum of the boron bound exciton in silicon have been investigated using ultrahigh-resolution Fourier-transform spectroscopy. Under stresses of 0 to 25 MPa, in the [001], [110], and [111] directions, up to 25 components with linewidths of less than 10-mu-eV have been resolved. A theoretical model, extending the shell model, has been developed to interpret the splittings in the bound-exciton energy levels. This includes terms expressing electron-stress, hole-stress, electron-hole, hole-hole, and valley-orbit interactions, with spherical and anisotropic corrections. The model fits the experimental data very closely, and gives values for the magnitude of the interactions.

引用

页码：11736 / 11743

页数：8

共 40 条

[1]

Bir G.L., 1974, SYMMETRY STRAIN INDU

[2] CALIBRATION OF THE PHOTOLUMINESCENCE TECHNIQUE FOR MEASURING B, P AND AL CONCENTRATIONS IN SI IN THE RANGE 10(12)TO 10(15)CM-3 USING FOURIER-TRANSFORM SPECTROSCOPY [J].

COLLEY, PM ;

LIGHTOWLERS, EC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (03) :157-166

[3]

CONDON EU, 1964, THEORY ATOMIC SPECTR

[4] ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J].

DEAN, PJ ;

FLOOD, WF ;

KAMINSKY, G .

PHYSICAL REVIEW, 1967, 163 (03) :721-&

[5] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[6] BOUND-EXCITON ABSORPTION IN SI=AL, SI=GA, AND SI=IN [J].

ELLIOTT, KR ;

OSBOURN, GC ;

SMITH, DL ;

MCGILL, TC .

PHYSICAL REVIEW B, 1978, 17 (04) :1808-1815

[7]

Gorbunov M. V., 1988, Soviet Physics - JETP, V67, P355

[8] ANALYSIS OF LO AND TO PHONON ASSISTED FREE EXCITON LUMINESCENCE IN SILICON [J].

HAMMOND, RB ;

SILVER, RN .

SOLID STATE COMMUNICATIONS, 1978, 28 (12) :993-996

[9]

HAYNES JR, 1960, PHYS REV LETT, V2, P256

[10]

Kaminskii A. S., 1982, Journal of Applied Spectroscopy, V36, P516, DOI 10.1007/BF00663653

← 1 2 3 4 →