ULTRAHIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF EXCITONS BOUND TO BORON IN SILICON UNDER UNIAXIAL-STRESS

被引：16

作者：

KARASYUK, VA ^{[1
]}

STEELE, AG ^{[1
]}

MAINWOOD, A ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

DAVIES, G ^{[1
]}

BRAKE, DM ^{[1
]}

THEWALT, MLW ^{[1
]}

机构：

[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.45.11736

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of uniaxial stress on the no-phonon photoluminescence spectrum of the boron bound exciton in silicon have been investigated using ultrahigh-resolution Fourier-transform spectroscopy. Under stresses of 0 to 25 MPa, in the [001], [110], and [111] directions, up to 25 components with linewidths of less than 10-mu-eV have been resolved. A theoretical model, extending the shell model, has been developed to interpret the splittings in the bound-exciton energy levels. This includes terms expressing electron-stress, hole-stress, electron-hole, hole-hole, and valley-orbit interactions, with spherical and anisotropic corrections. The model fits the experimental data very closely, and gives values for the magnitude of the interactions.

引用

页码：11736 / 11743

页数：8

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