ULTRAHIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF EXCITONS BOUND TO BORON IN SILICON UNDER UNIAXIAL-STRESS

被引:16
作者
KARASYUK, VA [1 ]
STEELE, AG [1 ]
MAINWOOD, A [1 ]
LIGHTOWLERS, EC [1 ]
DAVIES, G [1 ]
BRAKE, DM [1 ]
THEWALT, MLW [1 ]
机构
[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 20期
关键词
D O I
10.1103/PhysRevB.45.11736
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of uniaxial stress on the no-phonon photoluminescence spectrum of the boron bound exciton in silicon have been investigated using ultrahigh-resolution Fourier-transform spectroscopy. Under stresses of 0 to 25 MPa, in the [001], [110], and [111] directions, up to 25 components with linewidths of less than 10-mu-eV have been resolved. A theoretical model, extending the shell model, has been developed to interpret the splittings in the bound-exciton energy levels. This includes terms expressing electron-stress, hole-stress, electron-hole, hole-hole, and valley-orbit interactions, with spherical and anisotropic corrections. The model fits the experimental data very closely, and gives values for the magnitude of the interactions.
引用
收藏
页码:11736 / 11743
页数:8
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