SURFACE COPPER CONTAMINATION OF AS-RECEIVED FLOAT-ZONE SILICON-WAFERS

被引：16

作者：

CANHAM, LT

DYBALL, MR

BARRACLOUGH, KG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.343521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：920 / 927

页数：8

共 27 条

[1]

BECKER DS, 1986, ACS SYM SER, V295, P366, DOI 10.1021/bk-1986-0295.ch023

[2] IMPACT OF DEIONIZED WATER RINSES ON SILICON SURFACE CLEANING [J].

BEYER, KD ;

KASTL, RH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1027-1029

[3] PHOTOLUMINESCENCE OF TRANSITION-METAL COMPLEXES IN SILICON [J].

CONZELMANN, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (01) :1-18

[4] PRECIPITATION OF COPPER IN SILICON [J].

DAS, G .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4459-4467

[5] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[6]

DEKOCK AJR, 1974, PHILIPS TECH REV, V34, P244

[7]

EICHINGER P, 1988, ASTM STP, V990

[8] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].

FULLER, CS ;

SEVERIENS, JC .

PHYSICAL REVIEW, 1954, 96 (01) :21-24

[9]

GRAFF K, 1983, AGGREGATION PHENOMEN, P121

[10]

Graff K., 1986, SEMICONDUCTOR SILICO, P751

← 1 2 3 →