CHARACTERIZATION OF THERMAL PLASMA CVD DIAMOND COATINGS AND THE INTERMEDIATE SIC PHASE

被引：28

作者：

TSAI, C ^{[1
]}

GERBERICH, W ^{[1
]}

LU, ZP ^{[1
]}

HEBERLEIN, J ^{[1
]}

PFENDER, E ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT MECH ENGN,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF MATERIALS RESEARCH | 1991年 / 6卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1991.2127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films have been successfully deposited by DC thermal plasma jet CVD at a rate of 40-mu-m/h under atmospheric and subatmospheric pressures. Transmission electron microscopy (TEM) has been used for the characterization of the diamond films and the intermediate phase. The orientation and the distribution of beta-SiC at the interface between the diamond and silicon substrate have been observed using selected-area electron diffraction with the associated dark-field images. X-ray diffraction, scanning electron microscopy, and Raman spectroscopy are used for the characterization of the produced diamond films. Potential applications of selected-area channeling patterns are discussed for investigating the correlations between the growth direction and the crystalline perfection.

引用

页码：2127 / 2133

页数：7

共 28 条

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ANGUS JC, 1989, MRS B

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