APPARENT RECOVERY EFFECT OF HYDROGENATED PD-ON-GAAS (N-TYPE) SCHOTTKY INTERFACE BY FORWARD CURRENT AT LOW-TEMPERATURE

被引：3

作者：

NIE, HY ^{[1
]}

NANNICHI, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 7A期

关键词：

HYDROGEN-INDUCED CHARGE; DEHYDROGENATION; FORWARD CURRENT; APPARENT RECOVERY EFFECT; ELECTRON TRAPPING;

D O I：

10.1143/JJAP.32.L890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen-induced charge in the hydrogenated Pd-on-GaAs (n-type) Schottky interface was observed to diminish upon application of forward current at low temperature. This apparent recovery disappears when the sample is heated towards room temperature, that is, the hydrogen-induced charge is reobserved without additional hydrogenation. Thus, it is conceivable that this apparent recovery eff ect is not due to the removal of the hydrogen, but to variation of the charge state of the hydrogen due to the trapping of the electrons.

引用

页码：L890 / L893

页数：4