STUDY OF ELECTRON TRAPS IN THE THIN INTERFACIAL OXIDE LAYER OF AL-N, AU-N AND SN-N GAAS SCHOTTKY BARRIERS BY DETRAPPING EXPERIMENTS

被引：7

作者：

VANMEIRHAEGHE, RL

LAFLERE, WH

CARDON, F

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 11期

关键词：

D O I：

10.1016/0038-1101(82)90146-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1089 / 1092

页数：4

共 8 条

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[5] ELECTRON TRAPPING IN THE OXIDE LAYER OF MIS-TYPE AL-N-TYPE, AU-N-TYPE, AG-N-TYPE AND SN-N-TYPE GAAS SCHOTTKY BARRIERS [J].

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F .

SOLID-STATE ELECTRONICS, 1982, 25 (05) :389-393

[6] THE INTERACTION OF THIN AU AND AL OVERLAYERS WITH THE GAAS(110) SURFACE [J].

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SPICER, WE .

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[8] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS [J].

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