GENERATION OF SIO2 INTERFACE STATES AT LOW-TEMPERATURE WITH IONIZING IRRADIATION

被引：6

作者：

BLUZER, N

AFFINITO, D

BLAHA, FC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期

关键词：

D O I：

10.1109/TNS.1981.4335677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4074 / 4079

页数：6

共 20 条

[1]

BLUZER N, 1979, N0017378C0293 US NAV

[2]

BLUZER N, 1979, P INT ELECT DEV M WA, P629

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J].

BOESCH, HE ;

MCLEAN, FB ;

MCGARRITY, JM ;

AUSMAN, GA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2163-2167

[4] EXPERIMENTAL CHARACTERIZATION OF TRANSFER EFFICIENCY IN CHARGE-COUPLED-DEVICES [J].

BRODERSEN, RW ;

BUSS, DD ;

TASCH, AF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) :40-46

[5]

BRODERSON RW, 1978, P INT C APPL CCDS SA, P331

[6] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[7]

JENQ CS, 1977, THESIS PRINCETON U

[8] DETERMINATION OF SURFACE-STATE PARAMETERS FROM TRANSFER-LOSS MEASUREMENTS IN CCDS [J].

KRIEGLER, RJ ;

DEVENYI, TF ;

CHIK, KD ;

SHAPPIR, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :398-401

[9] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657

[10]

MOSHEN AM, 1974, IEEE T ELECTRON DEV, VED21, P701

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