MBE GROWTH OF GRADED INDEX ALGAINAS MQW LASERS ON INP

被引：16

作者：

ALLOVON, M

QUILLEC, M

BLEZ, M

KAZMIERSKI, C

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91025-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlGaInAs SCH MQW lasers with continuously graded bandgap active region have been grown by MBE lattice matched to InP. The design of the structure and the MBE growth technique used to grow graded quaternary layers are reported in details. Improved laser results are reported both for broad area devices and for buried ridge stripe processed lasers. A threshold current density as low as 820 A/cm2 is obtained for a 1180-mu-m long device. A record cw threshold current of 17 mA is reported for a AlGaInAs laser, with a resonance frequency of 6.7 GHz.

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页码：484 / 488

页数：5

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