FABRICATION AND CHARACTERIZATION OF LONG-WAVELENGTH, GAINAS/ALGAINAS/INP MODIFIED-MQW LASERS

被引：16

作者：

WILLIAMS, PJ

ROBBINS, DJ

REID, TJ

DAVIES, JI

MARSHALL, AC

CARTER, AC

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 01期

关键词：

D O I：

10.1049/el:19890004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：5 / 6

页数：2

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共 8 条

[1] ALGALNAS/INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY LOW-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY FOR EMISSION AT 1300-NM [J].

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[2] INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAWAMURA, Y ;

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WAKITA, K .

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[3] LOW THRESHOLD CURRENT GALNAS/ALLNAS RIDGE MQW LASERS WITH INP CLADDING LAYERS [J].

KAWAMURA, Y ;

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ELECTRONICS LETTERS, 1988, 24 (10) :637-638

[4] LOW INTERNAL LOSS SEPARATE CONFINEMENT HETEROSTRUCTURE INGAAS INGAASP QUANTUM-WELL LASER [J].

KOREN, U ;

MILLER, BI ;

SU, YK ;

KOCH, TL ;

BOWERS, JE .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1744-1746

[5] ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GAINAS/ALINAS MQW LASERS IN 1.5 MU-M RANGE [J].

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TAKEUCHI, O .

ELECTRONICS LETTERS, 1987, 23 (24) :1271-1273

[6]

THIJS PJA, 1987, C P ECOC

[7] CHEMICAL BEAM EPITAXIAL-GROWTH OF VERY LOW THRESHOLD GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1010-1012

[8] EFFECT OF BARRIER WIDTH ON PERFORMANCE OF LONG WAVELENGTH GAINAS/INP MULTI-QUANTUM-WELL LASERS [J].

WILLIAMS, PJ ;

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CUSH, R ;

SCOTT, MD ;

DAVIES, JI ;

MARSHALL, AC ;

RIFFAT, J ;

CARTER, AC .

ELECTRONICS LETTERS, 1988, 24 (14) :859-860