共 11 条
- [1] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 254 - 256ALAVI, KTEMKIN, HWAGNER, WRCHO, AY
- [2] MONOLITHIC INTEGRATED INGAALAS INP RIDGE WAVE-GUIDE PHOTODIODES FOR 1.55-MU-M OPERATION GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1515 - 1517CINGUINO, PGENOVA, FRIGO, CCACCIATORE, CSTANO, A
- [3] IMPROVEMENTS IN THE STRUCTURAL QUALITY OF AL0.48IN0.52AS GROWN BY LOW-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (03) : 223 - 226DAVIES, JIHODSON, PDMARSHALL, ACSCOTT, MDGRIFFITHS, RJM
- [4] DAVIES JI, IN PRESS STRUCTURAL
- [5] INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY ATMOSPHERIC-PRESSURE MOCVD[J]. ELECTRONICS LETTERS, 1985, 21 (02) : 60 - 62DUPUIS, RDTEMKIN, HHOPKINS, LC
- [6] MOLECULAR-BEAM EPITAXY GROWTH OF IN0.53(GAXAL1-X)0.47AS QUATERNARY LAYERS FOR OPTOINTEGRATED DEVICES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 811 - 814GENOVA, FMORELLO, GRIGO, C
- [7] INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY[J]. ELECTRONICS LETTERS, 1984, 20 (11) : 459 - 460KAWAMURA, YASAHI, HWAKITA, K
- [8] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 476 - 478OLEGO, DCHANG, TYSILBERG, ECARIDI, EAPINCZUK, A
- [9] LOW-THRESHOLD 1.3 MU-M GAINASP-INP LASERS GROWN BY ATMOSPHERIC-PRESSURE MOVPE[J]. ELECTRONICS LETTERS, 1985, 21 (12) : 521 - 522ROSE, BDEVOLDERE, PMIRCEA, AROBEIN, DTROTTE, M
- [10] 1.3-MU-M WAVELENGTH GAINASP INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1094 - 1096TSANG, WTREINHART, FKDITZENBERGER, JA