ULTRAHIGH-SPEED HEMT LSI TECHNOLOGY FOR SUPERCOMPUTER

The current status of high electron mobility transistor (HEMT) technology at Fujitsu for high-performance VLSI is presented, focusing on device performance in the submicrometer dimensional range, and HEMT LSI's implemented, for the first time, in supercomputer systems. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. The 1.1K-gate bus-driver logic LSI has been developed to demonstrate the high-speed data transfer in a high-speed parallel processing system at room temperature, operating at 10.92 GFLOPS. The cryogenic 3.3K-gate random number generator logic LSI with maximum clock frequency of 1.6 GHz has also been developed to demonstrate the high-clock-rate system operations at liquid-nitrogen temperature. For VLSI level complexity, a HEMT 64-kb static RAM with 1.2-ns access operation and a 45K-gate gate array with 35-ps logic delay have been developed operating at room temperature, demonstrating the high performance required for future high-speed computer systems.