PHOTOLUMINESCENCE AND MAGNETIC-RESONANCE STUDIES OF ER3+ IN MEV ION-IMPLANTED GAAS

被引：28

作者：

KLEIN, PB

MOORE, FG

DIETRICH, HB

机构：

[1] Naval Research Laboratory, Washington

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.104621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3+ electron paramagnetic resonance (EPR) signal as well as the Er3+ and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3+ PL is observed from several distinct Er sites in the annealed material. In addition, the observed dependences upon anneal temperature suggest that the Er3+ PL is emitted from centers that are not in the Er3+ state at equilibrium. Absolute EPR measurements of the Er3+ concentration indicate that only a small fraction (< 0.1%) of the Er in the sample is Er3+.

引用

页码：502 / 504

页数：3

共 7 条

[1] ELECTRON-SPIN RESONANCE OF ERBIUM IN GALLIUM-ARSENIDE
BAEUMLER, M
SCHNEIDER, J
KOHL, F
TOMZIG, E
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (35): : L963 - L965
[2] 1.54-MU-M ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED GAAS AND GAAIAS GROWN BY MOLECULAR-BEAM EPITAXY
GALTIER, P
POCHOLLE, JP
CHARASSE, MN
DECREMOUX, B
HIRTZ, JP
GROUSSIN, B
BENYATTOU, T
GUILLOT, G
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2105 - 2107
[3] Kaldis E., 1985, Crystal Growth of Electronic Materials. 5th International Summer School on Crystal Growth and Materials Research, P313
[4] 1.54 MU-M ELECTROLUMINESCENCE IN MEV ION-IMPLANTED ER-DOPED GAAS
KLEIN, PB
MOORE, FG
DIETRICH, HB
[J]. ELECTRONICS LETTERS, 1990, 26 (16) : 1299 - 1300
[5] LATTICE LOCATION AND OPTICAL-ACTIVITY OF YB IN III-V SEMICONDUCTING COMPOUNDS
KOZANECKI, A
GROETZSCHEL, R
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 517 - 522
[6] TEMPERATURE-DEPENDENCE OF INTRA-4F-SHELL PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE SPECTRA FOR ERBIUM-DOPED GAAS
TAKAHEI, K
WHITNEY, PS
NAKAGOME, H
UWAI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1257 - 1260
[7] ERBIUM-DOPED GAAS LIGHT-EMITTING-DIODES EMITTING ERBIUM F-SHELL LUMINESCENCE AT 1.54-MU-M
WHITNEY, PS
UWAI, K
NAKAGOME, H
TAKAHEI, K
[J]. ELECTRONICS LETTERS, 1988, 24 (12) : 740 - 741

← 1 →