SPECTROSCOPIC ELLIPSOMETRY - A USEFUL TOOL TO DETERMINE THE REFRACTIVE-INDEXES AND INTERFACES OF IN0.52AL0.48AS AND IN0.53ALXGA0.47-XAS LAYERS ON INP IN THE WAVELENGTH RANGE 280-1900 NM

被引：7

作者：

DINGES, HW

BURKHARD, H

LOSCH, R

NICKEL, H

SCHLAPP, W

机构：

[1] Deutsche Bundespost Telekom Forschungs- und Technologiezentrum, D-6100 Darmstadt

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(93)90342-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In0.52Al0.48As and In0.53AlxGa0.47-xAs layers on InP are promising quaternary materials for optoelectronic devices: lasers containing these materials have been realized and show excellent performance. The refractive indices of both In0.52Al0.458Ga0.022As and In0.53Al0.055Ga0.415As are measured for the first time with multiple angle spectroscopic ellipsometry in the wavelength range 280-1900 nm.

引用

页码：174 / 176

页数：3

共 10 条

[1]

[Anonymous], 1985, HDB OPTICAL CONSTANT

[2] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].