THE EFFECT OF NITROGEN ON THE MECHANICAL-PROPERTIES OF FLOAT ZONE SILICON AND ON CCD DEVICE PERFORMANCE

被引：14

作者：

JASTRZEBSKI, L

CULLEN, GW

SOYDAN, R

HARBEKE, G

LAGOWSKI, J

VECRUMBA, S

HENRY, WN

机构：

[1] LABS RCA LTD,CH-8048 ZURICH,SWITZERLAND

[2] MIT,CAMBRIDGE,MA 02139

[3] RCA CORP,DIV NEW PROD,LANCASTER,PA 17604

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 02期

关键词：

Nitrogen - SEMICONDUCTOR DEVICES; CHARGE COUPLED - Performance;

D O I：

10.1149/1.2100481

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of nitrogen on the mechanical properties of float zone wafers was investigated. It has been established that resistance to wafer breakage/warpage and dislocation generation can be affected by the presence of nitrogen. The improvement of mechanical properties is reflected in the reduction in the amount of process-induced defects, and in the yield improvement of CCD imagers made in these wafers. The relationship between the mechanical properties of silicon and the nitrogen concentration and state is complex.

引用

页码：466 / 470

页数：5

共 20 条

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Abe T., 1985, ECS P, P543

[2]

ABE T, 1981, ELECTROCHEMICAL SOC, P54

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