A COMPACT PHYSICAL LARGE-SIGNAL MODEL FOR HIGH-SPEED BIPOLAR-TRANSISTORS AT HIGH-CURRENT DENSITIES .1. ONE-DIMENSIONAL MODEL

被引：43

作者：

STUBING, H

REIN, HM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期

关键词：

D O I：

10.1109/T-ED.1987.23146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1741 / 1751

页数：11

共 28 条

[11]

Ranfft R., 1982, Microelectronics Journal, V13, P23, DOI 10.1016/S0026-2692(82)80005-0

[12] HIGH-SPEED BIPOLAR LOGIC-CIRCUITS WITH LOW-POWER CONSUMPTION FOR LSI - A COMPARISON [J].

RANFFT, R ;

REIN, HM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (04) :703-712

[13] PROPER CHOICE OF THE MEASURING FREQUENCY FOR DETERMINING FT OF BIPOLAR-TRANSISTORS [J].

REIN, HM .

SOLID-STATE ELECTRONICS, 1983, 26 (01) :75-82

[14] VERIFICATION OF THE INTEGRAL CHARGE-CONTROL RELATION FOR HIGH-SPEED BIPOLAR-TRANSISTORS AT HIGH-CURRENT DENSITIES [J].

REIN, HM ;

STUBING, H ;

SCHROTER, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1070-1076

[15] A SIMPLE METHOD FOR SEPARATION OF THE INTERNAL AND EXTERNAL (PERIPHERAL) CURRENTS OF BIPOLAR-TRANSISTORS [J].

REIN, HM .

SOLID-STATE ELECTRONICS, 1984, 27 (07) :625-631

[16]

REIN HM, 1983, SOLID STATE ELECTRON, V26, P929

[17] A COMPACT PHYSICAL LARGE-SIGNAL MODEL FOR HIGH-SPEED BIPOLAR-TRANSISTORS AT HIGH-CURRENT DENSITIES .2. TWO-DIMENSIONAL MODEL AND EXPERIMENTAL RESULTS [J].

REIN, HM ;

SCHROTER, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1752-1761

[18]

REIN HM, 1980, INTEGRIERTE BIPOLARS

[19] TWO-DIMENSIONAL MODELING OF HIGH-SPEED BIPOLAR-TRANSISTORS AT HIGH-CURRENT DENSITIES USING THE INTEGRAL CHARGE-CONTROL RELATION [J].

SCHROTER, M ;

REIN, HM .

PHYSICA B & C, 1985, 129 (1-3) :332-336

[20]

SCHROTER M, 1986, COMMUNICATION

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