CHARACTERIZATION OF CDO THIN-FILMS BY EER AND PHOTOELECTROCHEMICAL MEASUREMENTS

被引：15

作者：

FERRER, IJ

机构：

[1] Dpto. de Física de Materiales, C-IV, U.A.M.

来源：

ELECTROCHIMICA ACTA | 1993年 / 38卷 / 15期

关键词：

CADMIUM OXIDE; ELECTROREFLECTANCE; PHOTOELECTROCHEMISTRY; SEMICONDUCTOR; THIN FILMS;

D O I：

10.1016/0013-4686(93)80098-K

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

CdO thin films prepared by thermal oxidation of metallic Cd layers were characterized by Electrolyte Electroreflectance (EER) and Photoelectrochemical measurements. A direct band gap between 2.5 and 2.7 eV is obtained by the two different methods used here. The flat band potential determined by EER was -0.30 +/- 0.05 V vs. sce.

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页码：2199 / 2201

页数：3

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