APPLICATION OF X-RAY REFLECTOMETRY IN STUDY OF NONIDEAL SI/SI1-X-GEX SUPERLATTICES

被引：9

作者：

BARIBEAU, JM

机构：

[1] Institute for Microstructural Sciences, National Research Council Canada, Ottawa

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.352185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray reflectometry and double-crystal diffraction have been applied to the characterization of molecular beam epitaxy-grown Si/Si1-xGex superlattices. It is shown, using specific examples, how reflectometry can help to solve difficulties encountered in double-crystal diffractometry analysis of nonideal superlattices than contain thickness fluctuations or in which partial strain relaxation has occurred.

引用

收藏

页码：4452 / 4454

页数：3

相关论文

共 9 条

[1] DOUBLE-CRYSTAL X-RAY-DIFFRACTION FROM SI1-XGEX/SI SUPERLATTICES - QUANTIFICATION OF PEAK BROADENING EFFECTS [J].

BARNETT, SJ ;

BROWN, GT ;

HOUGHTON, DC ;

BARIBEAU, JM .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1781-1783

[2] SILICON-BASED SEMICONDUCTOR HETEROSTRUCTURES - COLUMN-IV BANDGAP ENGINEERING [J].

BEAN, JC .

PROCEEDINGS OF THE IEEE, 1992, 80 (04) :571-587

[3] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].

DISMUKES, JP ;

PAFF, RJ ;

EKSTROM, L .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&

[4] STRAIN RELAXATION AND INTERDIFFUSION IN SI/SI1-XGEX STRAINED LAYER SUPERLATTICES [J].

GOORSKY, MS ;

KESAN, VP ;

OTT, JA ;

ANGILELLO, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :927-929

[5]

HOUGHTON DC, 1987, J CRYST GROWTH, V81, P343

[6] SURFACE STUDIES OF SOLIDS BY TOTAL REFLECTION OF X-RAYS [J].

PARRATT, LG .

PHYSICAL REVIEW, 1954, 95 (02) :359-369

[7]

POWELL AR, 1992, MATER RES SOC SYMP P, V238, P653

[8] DETERMINATION OF THICKNESS ERRORS AND BOUNDARY ROUGHNESS FROM THE MEASURED PERFORMANCE OF A MULTILAYER COATING [J].

SPILLER, E ;

ROSENBLUTH, AE .

OPTICAL ENGINEERING, 1986, 25 (08) :954-963

[9] X-RAY-SCATTERING FROM INTERFACIAL ROUGHNESS IN MULTILAYER STRUCTURES [J].

STEARNS, DG .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) :4286-4298