TRANSIENT PHOTOCURRENTS IN A-SI-H DIODES - EFFECTS OF DEEP TRAPPING

被引：10

作者：

WIECZOREK, H

FUHS, W

机构：

[1] SIEMENS AG,RES LABS,MUNICH,FED REP GER

[2] PHILIPPS UNIV,FACHBEREICH PHYS,MARBURG,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 109卷 / 01期

关键词：

D O I：

10.1002/pssa.2211090126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The decay of the photocurrent of photodiodes, which consist of a-Si:H sandwiched between blocking contacts (Pd, Ti), was studied after excitation to the steady state through the Pd-electrode. The slow decay of the primary photocurrent is attributed to deep trapping of electrons. It is suggested that the time-limiting process for the decay is thermal emission from traps in a depth of 0.5 to 0.65 eV below the mobility edge.

引用

页码：245 / 253

页数：9

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