OBSERVATION OF FIELD-INDUCED REFRACTIVE-INDEX VARIATION IN GAINAS INP QUANTUM WIRE (QW) STRUCTURE

被引：2

作者：

KIKUGAWA, T

RAVIKUMAR, KG

AIZAWA, T

ARAI, S

SUEMATSU, Y

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 2-12-1, O-okayama, Meguro-ku

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Quantum optics; Semiconductor devices and materials;

D O I：

10.1049/el:19900655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large refractive index variation of 2% was observed in a GalnAs/lnP multi-layered quantum wire (QW) structure at a reverse bias voltage of 4 V. This index variation indicated clear polarisation dependence which agreed well with theoretical results for QWs. Three periods of GalnAs (9nm)/InP (4 nm) multi-layered QW structure with the wire width of 25 to 35 nm was fabricated with a holographic lithography and a low defect ultra-high vacuum ECR-RIBE method on LP-OMVPE grown quantum film wafer. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：1012 / 1013

页数：2

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