IMPACT IONIZATION WAVEFRONT IN PARA-INSB

被引:4
作者
ANCKERJOHNSON, B
DICK, CL
机构
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D O I
10.1016/0038-1098(71)90270-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:125 / +
页数:1
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[1]  
ANCKERJO.B, 1966, J PHYS SOC JPN, VS 21, P694
[2]   TRANSIENT HIGH-DENSITY INJECTION IN A SEMICONDUCTOR WITH TRAPS [J].
ANCKERJOHNSON, B ;
ROBBINS, WP ;
CHANG, DB .
APPLIED PHYSICS LETTERS, 1970, 16 (10) :377-+
[3]   LOW FIELD INJECTION IN N-INSB [J].
ANCKERJOHNSON, B ;
DICK, CL .
APPLIED PHYSICS LETTERS, 1969, 15 (05) :141-+
[4]  
ANCKERJOHNSON B, 1969, B AM PHYS SOC, V14, P384
[5]   AVALANCHE PLASMA PRODUCTION AND INSTABILITIES ON SUBNANOSECOND TIME SCALES .2. [J].
ANCKERJOHNSON, B .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (05) :1156-+
[6]   PROPERTIES OF INJECTED PLASMAS IN INDIUM ANTIMONIDE [J].
ANCKERJOHNSON, B ;
COHEN, RW ;
GLICKSMAN, M .
PHYSICAL REVIEW, 1961, 124 (06) :1745-&
[7]  
ANCKERJOHNSON B, TO BE PUBLISHED
[8]  
ANCKERJOHNSON B, 1968, P INT C PHYS SEMICON, P813
[9]  
ANCKERJOHNSON B, 1966, SEMICONDUCT SEMIMET, V1, P379
[10]  
ANCKERJOHNSON B, 1968, B APS, V13, P495