CHARACTERIZATION OF THE INTERFACE ABRUPTNESS OF IN0.53GA0.47AS/INP MULTI-QUANTUM-WELLS BY RAMAN-SPECTROSCOPY, X-RAY-DIFFRACTOMETRY AND PHOTOLUMINESCENCE

被引：15

作者：

GEURTS, J ^{[1
]}

FINDERS, J ^{[1
]}

WOITOK, J ^{[1
]}

GNOTH, D ^{[1
]}

KOHL, A ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-52056 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91147-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For lattice-matched InGaAs/InP multi quantum well structures, the interface abruptness was investigated by a combination of X-ray diffractometry, Raman spectroscopy and photoluminescence. The focus was on the effects of the gas switching parameters at the InGaAs-to-InP interface, especially the PH3 and H-2 purging times. Ternary InAsP and quaternary InGaAsP interface layers due to carry-over and exchange effects were directly identified. Their thicknesses drastically depend on the PH3 purging time. H-2 purging affects the interface quality to some degree, but it has only minor effects on the chemical composition at the interfaces.

引用

页码：813 / 818

页数：6

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