STRAINED LAYER INGAAS CHANNEL NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR

被引：18

作者：

FAVARO, ME ^{[1
]}

FERNANDEZ, GE ^{[1
]}

HIGMAN, TK ^{[1
]}

YORK, PK ^{[1
]}

MILLER, LM ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,NATL SCI FDN,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.342552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：378 / 380

页数：3

共 16 条

[1]

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[2]

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[8] HIGH-FREQUENCY AMPLIFICATION AND GENERATION IN CHARGE INJECTION DEVICES [J].

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[9] NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J].

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[10] CHARACTERIZATION OF INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

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KLEM, J ;

PENG, CK ;

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MORKOC, H ;

GLEASON, KR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :564-571

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