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STRUCTURAL-PROPERTIES OF SILICON-OXIDE FILMS PREPARED BY THE RF SUBSTRATE BIASED ECR PLASMA CVD METHOD

被引：11
作者：
KITAGAWA, M
HIRAO, T
OHMURA, T
IZUMI, T
机构：
[1] MATSUSHITA TECHNORES INC, MORIGUCHI, OSAKA 570, JAPAN
[2] TOKAI UNIV, FAC ENGN, DEPT ELECTR, HIRATSUKA, KANAGAWA 25912, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 06期
关键词：
D O I：
10.1143/JJAP.28.L1048
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1048 / L1050
页数：3
相关论文
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